Thermo Electronic Properties of DNA Molecule as a Single Electron Transistor(SET)
Abstract
In this paper, a DNA molecule is modeled as a basis for studying the properties of a single electron
transistor (SET). Solid binding model (SET) characterization and stationary-state equation are adopted to
elucidate the electron transport properties through this model. In this work, a good pattern is presented for
the calculation of curves (IV) for a single electron transistor and theoretical calculations for the drain
current as a function of the source bank voltage and study the effect of heat and gate voltages on it. All
calculations of this model are based on the transmittance spectrum. The results of the transmittance
spectrum were calculated at equilibrium. The current was evaluated using the Landauers formula.
Through the results obtained, it is clear that there is a mutual effect between the gate voltage and the
source-drain voltage on the current of the source-drain. Also, there is a clear effect of the temperature of
the electrodes on the values of the source-drain in all the studied cases. Through all these calculations of
the DNA molecule the results were encouraging and gave the common features of SET. These results are
very useful for getting closer and closer to the fabrication of nanoscale electronic parts.
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