Solar cell with double quantum dot structure

Authors

  • Amin Habbeb Al-Khursan Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University, Nassiriya, Iraq
  • Suha Hadi Nassiriya Nanotechnology Research Laboratory (NNRL), Science College, Thi-Qar University, Nassiriya, Iraq

DOI:

https://doi.org/10.32792/jeps.v10i1.52

Keywords:

double quantum dot solar cell, electron-hole model, excitonic model, recombination rate, band-to-band, quantum efficiency

Abstract

In this work, a double quantum dot (QD) structure is introduced as an intermediate band for highperformance
solar cells (SCs). Coupling the dynamical (density matrix) equations with the continuitycurrent
equation and solving them numerically to obtain the quantum efficiency (QE). which allowed to
address the interaction between all the states and band of SC which is not possible elsewhere and better
than the rate equation modeling. Throughout this modeling, the momentum matrix elements of QD-QD,
QD-wetting layer (WL), and WL-barrier transitions are calculated and the orthogonalized plane wave is
assumed for WL-QD transitions. Results are simulated both the excitonic and non-excitonic (electronhole
eh) cases and exhibit the importance of adding the QD layer.
The valence band (VB) DQD states have similar occupations while the conduction band (CB) is
not. The WL occupations are the smallest in both CB and VB as it works like a reservoir. These results
confirm both the importance of adding the intermediate band (QD layer) and the carrier scenarios. The
band-to-band recombination rates in the DQD structure are modulated with the energy difference. The
VB relaxation rates between states are of the same order and lower than the corresponding CB rates related
to their occupation. The occupations in the excitonic model do not much differ from the eh model. A few
increments in the excitonic model in the CB and VB barrier-WL relaxation while a reduction in the VB
WL-QD and QD-QD relaxation appears. The band-to-band recombination rates in the excitonic model
are reduced compared to the eh model. The photo-generation rates have the highest rate at QDs. The
quantum efficiency (QE) in the eh model is increased at semi-linear relation with VB relaxation rates
while it is increased exponentially with CB rates. Longer relaxation times for WL-QD check it pleas
transitions are attained with a wider energy difference. For the DQD structure, the longer relaxations and
band-to-band recombinations are accessed depending on the wider energy difference

References

yu, J. Kim, J. Jang, “CdSe quantum dot cathode buffer for inverted organic bulk hetero-junction solar

cells”, Organic Electronics 13 (2012) 1302–1307.

C. Lin, M. Tan, C. Tsai, K. Y. Chuang, T. S. Lay, “Numerical Study of Quantum-Dot-Embedded Solar

Cells”, IEEE J. Selected Topics in Quantum Electronics 19 (2013 ) 4000110.

S. A. Mintairov, N. A. Kalyuzhnyy, M. V. Maximov, A. M. Nadtochiy, S. Rouvimov, and A. E.

Zhukov, “GaAs quantum well-dots solar cells with spectral response extended to 1100 nm”,

Electronics Letters 51 (2015) 1602-1604.

A. Luque, A. Panchak, I. Ramiro, P. Garcia-Linares, A. Mellor, E. Antolın, A. Vlasov, V. Andreev,

and A. Marti, “Quantum Dot Parameters Determination from Quantum-Efficiency Measurements”,

IEEE J. Photovoltaics 5 (2015) 1074-1078.

D. Kim, M. Tang, J. Wu, S. Hatch, Y. Maidaniuk, V. Dorgan, Y. I. Mazur, G. J. Salamo, and H. Liu,

“Si-doped InAs/GaAs Quantum-Dot Solar Cell with AlAs Cap Layers”, IEEE J. Photovoltaics 6

(2016) 906-911.

D. Kim, S. Hatch, J. Wu, K. A. Sablon, P. Lam, P. Jurczak, M. Tang, W. P. Gillin, and H. Liu, “Type-

II InAs/GaAsSb Quantum Dot Solar Cells with GaAs Interlayer”, IEEE J. Photovoltaics 8 (2018) 741-

I. Ramiro, J. Villa, P. Lam, S. Hatch, J. Wu, E. Lopez, E. Antolin, H. Liu, A. Martı, and A. Luque,

“Wide-Bandgap InAs/InGaP Quantum-Dot Intermediate Band Solar Cells”, IEEE J. Photovoltaics 5

(2015) 840-845.

D. Kim, S. Hatch, J. Wu, K. A. Sablon, P. Lam, P. Jurczak, M. Tang, W. P. Gillin, and H. Liu, “Type-

II InAs/GaAsSb Quantum Dot Solar Cells with GaAs Interlayer”, IEEE J. Photovoltaics 8 (2018) 741-

M. Gioannini, A. Cedola, F. Cappelluti, “Impact of carrier dynamics on the photovoltaic performance

of quantum dot solar cells”, IET Optoelectronics 9, (2015) 69-74.

M. Gioannini and Ariel P. Cedola, "Simulation of Quantum Dot Solar Cells Including Carrier

Intersubband Dynamics and Transport", IEEE J. Photovoltaics 3, 1271-1278 (2013).

“A. Cedola, F. Cappelluti and M. Gioannini, “Dependence of quantum dot photocurrent on the carrier

escape nature in InAs/GaAs quantum dot solar cells”, Semicond. Sci. Technol. 31, 025018 (2016).

F. Cappellutin, M. Gioannini, A. Khalili, “Impact of doping on InAs/GaAs quantum-dot solar cells:

A numerical study on photovoltaic and photoluminescence behavior”, Solar Energy Materials & Solar

Cells 157, 209–220 (2016).

J. M. Villas-Bôas, A. O. Govorov, and S. E. Ulloa, “Coherent control of tunneling in a quantum dot

molecule”, Phys. Rev. B 69 (2004) 125342.

H. S. Borges, L. Sanz, J. M. Villas-Boas, O. D. Neto, and A. M. Alcalde, “Tunneling induced

transparency and slow light in quantum dot molecules,” Phys. Rev. B 85 (2012) 115425.

B. Al-Nashy, S. M. M. Amin and Amin H. Al-Khursan, "Kerr effect in Y- configuration double

quantum dot System", J. Opt. Soc. Am. B 31 (2014) 1991-1996

M. Abdullah, Farah T. Mohammed Noori, and Amin H. Al-Khurasan, "Terahertz emission in ladder

plus Y-configurations in double quantum dot structure", Applied Optics 16 (2015) 5186-5192.

F. R. Al-Salihi and Amin Habbeb Al-Khursan, “Electromagnetically induced grating in double

quantum dot system”, Optical and Quantum Electronics 52 (2020) 185.

F. K. Hachim, F. H. Hannon, and Amin Habbeb Al-Khursan, “Adaptive prism using double quantum

dot structure” Applied Optics 59 (2020) 2759-2766.

L. Seravalli, M. Gioannini, F. Cappelluti, F. Sacconi, G. Trevisi, and P. Frigeri, “Broadband light

sources based on InAs/InGaAs metamorphic quantum dots”, J. Appl. Phys. 119 (2016) 143102.

S. N. Dwara and Amin H. Al-Khursan, "Quantum Efficiency of InSbBi Quantum Dot photodetector",

Applied Optics 54, 9722-9727 (2015).

S. N. Dwara and A. H. Al-Khursan, "Two-window InSbBi quantum-dot photodetector", Applied

Optics 55, 5591-5595 (2016).

M. Gioannini and I. Montrosset, “Numerical Analysis of the Frequency Chirp in Quantum-Dot

Semiconductor Lasers”, IEEE Quantum electronics 43 (2007) 941-494.

Y. Ben Ezra, B. I. Lembrikov, and M. Haridim, “Specific features of XGM in QD-SOA,” IEEE J.

Quantum Electron. 43, 730–737 (2007).

A. H. Flayyih and A. H. Al-Khursan, “Integral gain in quantum dot semiconductor optical

amplifiers”, Superlattices Microstruct. 62, 81–87 (2013).

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Published

2020-12-03

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